SOLARIS 150mm
RAPID THERMAL PROCESS OVEN (RTP)
Overview
Rapid thermal annealing furnaces offer a wide range of applications such as annealing for silicon and compound semiconductor wafers (RTA), rapid thermal oxidation (RTO), rapid thermal nitriding (RTN), rapid thermal diffusion from a spin-on dopant, crystallization, contact alloying, etc..
Rapid Thermal Processing was originally developed for ion implant anneal but has broadened its application to oxidation, silicide formation, chemical vapor deposition, and advanced applications such as modifying the crystallographic phase of elements, compounds or alloys to enhance properties, lattice interface or stress relaxation. RTP is a flexible technology that provides fast heating and cooling to process temperatures of ~200-1300°C with ramp rates typically 20-150°C/sec, combined with excellent gas ambient control, allowing the creation of sophisticated multistage processes within one processing recipe.
Main Features
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Wafer handling: Manual loading of wafer into the oven, single wafer processing
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Wafer sizes: 2", 3", 4", 5", 6"
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Ramp up rate: 1-150°C per second, user-controllable.
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Recommended steady state duration: Unlimited, dependent on Temp & cooling
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Ramp down rate: Temperature Dependent, max 150°C per second.
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Recommended steady state temperature range: RT - 1200°C
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Temperature accuracy: +1.78°C total errors
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Thermocouple temperature accuracy: +1.1°C
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Temperature repeatability: +2°C or better at Steady State
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For a titanium silicidation process, no more than 4% increase in non-uniformity
during the first anneal at 650°C to 700°C.
Applications
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The Solaris RTP system is a versatile tool that is useful for many applications:
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Ion Implant Activation
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Polysilicon Annealing
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Oxide Reflow
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Silicide Formation
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Contact Alloying
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Oxidation and Nitridation
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GaAs Processing
