SOLARIS 200mm
RAPID THERMAL PROCESS OVEN (RTP)
Overview
Rapid thermal annealing furnaces offer a wide range of applications such as annealing for silicon and compound semiconductor wafers (RTA), rapid thermal oxidation (RTO), rapid thermal nitriding (RTN), rapid thermal diffusion from a spin-on dopant, crystallization, contact alloying, etc..
The Solaris 200 is a manual loading RTP system built typically for the R&D.
The Solaris uses a unique PID process controller that ensures accurate temperature stability and uniformity. The system can accommodate 6 interlocked MFCs for gas mixing and forming gas processing. The Solaris is designed for silicon implant annealing and monitoring and compound semiconductor implant activation and ohmic alloying.
​
This System has state of the art options available and is customizable by the end user on purchase. We work with the buyer on every additional feature needed to have a final product that will meet the laboratory demands of the modern scientist. If you are interested in these customizable options please contact a sales representative in your area.
Main Features
-
Wafer handling: Manual loading of wafer into the oven, single wafer processing
-
Wafer sizes: 2", 3", 4",5",6",8"
-
Ramp up rate: 1-150°C per second, user-controllable.
-
Recommended steady state duration: Unlimited, dependent on Temp & cooling
-
Ramp down rate: Temperature Dependent, max 150°C per second.
-
Recommended steady state temperature range: RT - 1200°C
-
Temperature accuracy: +1.78°C total errors
-
Thermocouple temperature accuracy: +1.1°C
-
Temperature repeatability: +2°C or better at Steady State
-
For a titanium silicidation process, no more than 4% increase in non-uniformity
during the first anneal at 650°C to 700°C.
Applications
​​
-
The Solaris RTP system is a versatile tool that is useful for many applications:
-
Ion Implant Activation
-
Polysilicon Annealing
-
Oxide Reflow
-
Silicide Formation
-
Contact Alloying
-
Oxidation and Nitridation
-
GaAs Processing
